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| inchange semiconductor product specification silicon pnp power transistors BDX88C description ? with to-3 package ? complement to type bdx87c ? darlington applications ? designed for use in power linear and switching application. pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i cm collector current(peak) -18 a i b base current -0.2 a p t total power dissipation t c =25 ?? 120 w t j max. operating junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.45 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors BDX88C characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.1a ; i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-6a ;i b =-24ma -2.0 v v cesat-2 collector-emitter saturation voltage i c =-12a ;i b =-120ma -3.0 v v besat base-emitter saturation voltage i c =-12a ;i b =-120ma -4.0 v v be base-emitter on voltage i c =-6a ; v ce =-3v -2.8 v h fe-1 dc current gain i c =-5a ; v ce =-3v 1000 h fe-2 dc current gain i c =-6a ; v ce =-3v 750 18000 h fe-3 dc current gain i c =-12a ; v ce =-3v 100 i cbo collector cut-off current v cb =-100v; i e =0 t c =150 ?? -0.5 -5.0 ma i ceo collector cut-off current v ce =-50v; i b =0 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma v f-1 diode forward voltage i f =-3a -1.8 v v f-2 diode forward voltage i f =-8a -2.5 v inchange semiconductor product specification 3 silicon pnp power transistors BDX88C package outline fig.2 outline dimensions |
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